Monte Carlo analysis of kink effect in short-channel InAlAs/InGaSs HEMTs

We apply a semiclassical 2D ensemble Monte Carlo (MC) simulator to study the kink effect in short-channel InAlAs/InGaAs lattice-matched High Electron Mobility Transistors (HEMTs). Holes generated by impact ionization in the drain side of the device tend to pile up in the channel under the source side of the gate due to the attracting potential caused by the surface charge at the recess and, mostly, by the gate potential. Due to this pile up of positive charge, the potential barrier controlling the current through the channel is lowered, so that the channel is further opened and the drain current (I_D) increases.