InP HEMT-based CPW amplifiers for 94 and 110 GHz

Author

Robin, Franck ; Orzati, Andrea ; Limacher, Roger ; Meier, Hanspeter ; Bachtold, Werner

Author_Institution

Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland

fYear

2003

fDate

12-16 May 2003

Firstpage

110

Lastpage

113

Abstract

94 GHz and 110 GHz single- and two-stages amplifiers have been fabricated with our in-house 0.1 μm lattice-matched InP HEMT process. The single transistors show state-of-the-art performances for this gate length with extrinsic f_T and f_max of 185 and 300 GHz, respectively and a maximum available gain (MAG) of 8.3 dB at 110 GHz. The single-stage amplifiers designed and fabricated in our laboratory showed excellent peak gains of 7.6 dB and 6.5 dB at 94 and 110 GHz, respectively. Two-stages amplifiers showed gain in excess of 12 dB at these frequencies with a 3 dB bandwidth better than 10 GHz. To improve the prediction accuracy of the circuit simulator, all transmission lines and T-junctions were modeled with an electromagnetic simulator.

Keywords

III-V semiconductors; coplanar waveguides; high electron mobility transistors; indium compounds; integrated optoelectronics; optical planar waveguides; semiconductor optical amplifiers; 0.1 micron; 110 GHz; 12 dB; 185 GHz; 300 GHz; 6.5 dB; 7.6 dB; 94 GHz; InP; InP HEMT-based CPW amplifiers; T-junctions; electromagnetic simulator; gate length; peak gains; single transistors; single-stage amplifiers; transmission lines; two-stages amplifiers; Accuracy; Bandwidth; Circuit simulation; Coplanar waveguides; Frequency; HEMTs; Indium phosphide; Laboratories; Performance gain; Predictive models;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205325

Filename

1205325