Double-gate HEMTs on transferred substrate

Author

Wichmann, N. ; Duszynski, I. ; Parenty, T. ; Bollaert, S. ; Mateos, J. ; Wallart, X. ; Cappy, A.

Author_Institution

Dept. Hyperfrequences et Semiconducteurs, IEMN, Villeneuve d´´Ascq, France

fYear

2003

fDate

12-16 May 2003

Firstpage

118

Lastpage

121

Abstract

We report the fabrication and DC characterization of the first In_0.52Al_0.48Al_0.48As/In_0.53Ga_0.47As double-gate HEMTs with simple-command (DG-HEMT-SC) and double-command (DG-HEMT-DC). These devices have been obtained by photolithography and by transferred substrate technique. Although layer structure has not been optimized, a maximum extrinsic transconductance of 460 mS/mm with a drain current I_ds of 160mA/mm is achieved for 1.5 μm gate length DG-HEMT-SC. A large ratio Gm/I_ds of 3V^-1 is obtained, which indicates improvement of charge command efficiency.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; photolithography; 1.5 micron; 460 mS/mm; DC characterization; In_0.52Al_0.48Al_0.48As-In_0.53Ga_0.47As; In_0.52Al_0.48Al_0.48As/In_0.53Ga_0.47As; double-command; double-gate HEMTs; fabrication; maximum extrinsic transconductance; photolithography; simple-command; transferred substrate; transferred substrate technique; Bonding; Circuits; Cutoff frequency; Fabrication; HEMTs; Indium phosphide; MODFETs; Ohmic contacts; Substrates; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205327

Filename

1205327