A 40-Gbit/s monolithic digital OEIC module composed of uni-traveling-carrier photodiode and InP HEMT decision circuit

Author

Murata, I. ; Kitabayashi, H. ; Shimizu, N. ; Kimura, S. ; Furuta, T. ; Watanabe, N. ; Sano, E.

Author_Institution

NTT Network Innovation Labs., Japan

Volume

1

fYear

2000

fDate

11-16 June 2000

Firstpage

345

Abstract

The authors describe an optoelectronic decision IC that is a monolithic combination of a uni-traveling-carrier photodiode and 0.1 /spl mu/m InAlAs-InGaAs-InP HEMTs for broadband optical fiber communication systems. The fabricated chip is packaged as an OEIC module, and 40 Gbit/s error-free operation is confirmed for an RZ data stream at the clock rate of 40 GHz for the first time.

Keywords

HEMT integrated circuits; decision circuits; digital communication; field effect digital integrated circuits; indium compounds; integrated optoelectronics; microwave photonics; modules; optical communication equipment; photodiodes; 0.1 micron; 40 GHz; 40 Gbit/s; InAlAs-InGaAs-InP; InP HEMT decision circuit; RZ data stream; broadband optical fiber communication systems; error-free operation; monolithic digital OEIC module; uni-traveling-carrier photodiode; Broadband communication; Error-free operation; HEMTs; MODFETs; Monolithic integrated circuits; Optical fiber communication; Optoelectronic devices; Packaging; Photodiodes; Photonic integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.861010

Filename

861010