DocumentCode
353072
Title
Time domain global modeling of EM propagation in semiconductor using irregular grids
Author
Hsiao-Ping Tsai ; Coccioli, R. ; Itoh, T.
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Volume
1
fYear
2000
fDate
11-16 June 2000
Firstpage
367
Abstract
A time domain technique for the combined solution of Maxwell´s equations and transport equations on an irregular grid has been developed. The code implemented has been tested against analytical models and applied to characterize EM propagation at microwave frequencies in semiconductor slab with arbitrary doping profile.
Keywords
MIMIC; MMIC; Maxwell equations; doping profiles; electromagnetic wave propagation; integrated circuit modelling; time-domain analysis; EM propagation; Maxwell´s equations; analytical models; arbitrary doping profile; irregular grids; semiconductor slab; time domain global modeling; transport equations; Charge carrier processes; Current density; Difference equations; Doping profiles; Finite difference methods; Frequency; Integral equations; Maxwell equations; Microwave circuits; Microwave devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-7803-5687-X
Type
conf
DOI
10.1109/MWSYM.2000.861022
Filename
861022
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