Title :
Thermal limitations of InP HBT´s in 80 and 160 Gbits-1 IC´s
Author :
Harrison, L. ; Dahlstrom, M. ; Krishnan, S. ; Griffith, Z. ; Kim, Y.M. ; Rodwell, M.J.W.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nottingham Univ., UK
Abstract :
A 3D thermal model based on finite elements has been developed for the analysis of the thermal resistance of InP heterojunction bipolar transistors. The model was verified by comparing simulated and experimental results. The simulations also show that the maximum temperature in the device can be significantly higher than the experimentally determined base-emitter junction temperature. By applying scaling laws, a road map for 80Gbit/s and 160Gbit/s devices is presented. Simulations show that devices suitable for 160Gbit/s circuits will be thermally possible if the InGaAs etch stop or contacting layer is removed from the sub collector.
Keywords :
III-V semiconductors; finite element analysis; heterojunction bipolar transistors; indium compounds; semiconductor device models; thermal resistance; 3D thermal model; InP; InP HBT; InP heterojunction bipolar transistors; finite elements; scaling laws; thermal limitations; thermal resistance; Circuit simulation; Computational modeling; Current density; Double heterojunction bipolar transistors; Finite element methods; Heterojunction bipolar transistors; Indium phosphide; Temperature; Thermal engineering; Thermal resistance;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205338
