Monolithic upconversion and reference IC for power amplifier linearization using GaAs HBTs

Author

Bingol, C. ; Hein, H. ; Gamm, E. ; Oehler, F. ; Doser, W. ; Riepe, K. ; Blanck, H.

Author_Institution

Fraunhofer-Inst. fur Integrierte Schaltungen, Erlangen, Germany

Volume

1

fYear

2000

fDate

11-16 June 2000

Firstpage

413

Abstract

In order to fulfil the linearity requirements of modern communication standards, a linearization system using adaptive digital predistortion has been developed. An increase of 12 dB in ACPR without decreasing the output power can be achieved with this system for W-CDMA signals. To achieve high system integration, a monolithic integrated linearization module comprising an upconverter and a reference downconverter has been realised. The linearization module has been fabricated in GaAs HBT technology and will be described in detail in this paper. Measurement results on this module show an overall output IP/sub 3/ of 14.9 dBm and an overall gain of 29.4 dB in the upconversion path.

Keywords

III-V semiconductors; MMIC frequency convertors; MMIC power amplifiers; bipolar MMIC; code division multiple access; gallium arsenide; heterojunction bipolar transistors; linearisation techniques; 29.4 dB; GaAs; HBTs; W-CDMA signals; adaptive digital predistortion; communication standards; monolithic integrated linearization module; output power; power amplifier linearization; reference downconverter; upconverter; Adaptive systems; Communication standards; Gallium arsenide; Heterojunction bipolar transistors; Linearity; Monolithic integrated circuits; Multiaccess communication; Power amplifiers; Power generation; Predistortion;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.861044

Filename

861044