DocumentCode
3530909
Title
2 mW single mode operation of 1.55 μm InAlGaAs/InP-AlGaAs/GaAs wafer fused tunable VCSELs optically pumped with 980 nm lasers
Author
Syrbu, A. ; Iakovlev, V. ; Suruceanu, G. ; Berseth, C.-A. ; Rudra, A. ; Mircea, A. ; Mereuta, A. ; Tadeoni, S. ; Kapon, E.
Author_Institution
BeamExpress S.A, Lausanne, Switzerland
fYear
2003
fDate
12-16 May 2003
Firstpage
202
Lastpage
203
Abstract
1.5 μm InAlGaAs/AlGaAs wafer fused tunable VCSELs with a maximum 2 mW of CW output power at room temperature are demonstrated. A 30 nm of continuous tuning range is achieved by application of less than 4 V between the top and bottom mirrors. Side mode suppression ratio in excess of 30 dB is characteristic for these devices.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical pumping; semiconductor lasers; surface emitting lasers; 1.55 μm InAlGaAs/InP-AlGaAs/GaAs wafer fused tunable VCSELs; 1.55 mm; 2 mW; 2 mW single mode operation; 4 V; 980 nm; CW output power; InAlGaAs-InP-AlGaAs-GaAs; side mode suppression ratio; Gallium arsenide; Laser excitation; Laser modes; Laser tuning; Optical pumping; Power generation; Power lasers; Pump lasers; Tunable circuits and devices; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN
0-7803-7704-4
Type
conf
DOI
10.1109/ICIPRM.2003.1205349
Filename
1205349
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