DocumentCode
353109
Title
Fully physical coupled electro-thermal simulations and measurements of power FETs
Author
Johnson, R.G. ; Batty, W. ; Panks, A.J. ; Snowden, C.M.
Author_Institution
Inst. of Microwaves & Photonics, Leeds Univ., UK
Volume
1
fYear
2000
fDate
11-16 June 2000
Firstpage
461
Abstract
A fully physical coupled electro-thermal model is presented. It is fast, efficient, suitable for CAD applications and capable of describing power FETs, MMICs and MMIC arrays. Results are presented which show the model gives good agreement with measurements for large power devices.
Keywords
circuit CAD; field effect MMIC; microwave power transistors; power field effect transistors; semiconductor device measurement; semiconductor device models; CAD applications; MMIC arrays; MMICs; coupled electro-thermal simulations; large power devices; power FETs; semiconductor device measurements; Electric resistance; Electric variables measurement; Equations; HEMTs; MMICs; MODFETs; Microwave FETs; Power measurement; Temperature; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-7803-5687-X
Type
conf
DOI
10.1109/MWSYM.2000.861070
Filename
861070
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