DocumentCode
3531189
Title
Photonic crystal lasers for nano-photonics
Author
Lee, Y.-H. ; Ryu, H.Y. ; Kim, S.H. ; Kwon, S.H.
Author_Institution
Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
fYear
2003
fDate
12-16 May 2003
Firstpage
285
Lastpage
288
Abstract
Characteristics of low threshold, high-index contrast, 2-D InP slab triangular- and square-lattice photonic crystal band edge lasers operating near 1,550 nm are summarized. Surface-emitting lasing actions are observed near the third Γ points and the band edges. A very low threshold of 35 μW is observed from the laser operating near the third TE-like mode Γ point. The lasing occurs from a very small pump area of 6 μm in diameter.
Keywords
III-V semiconductors; indium compounds; photonic crystals; semiconductor device measurement; semiconductor lasers; 1550 nm; 35 muW; 6 micron; InP; band edge; nano-photonics; photonic crystal lasers; surface-emitting lasing actions; third TE-like mode Γ point; Distributed feedback devices; Laser feedback; Laser modes; Laser theory; Lattices; Photonic crystals; Pump lasers; Semiconductor lasers; Slabs; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN
0-7803-7704-4
Type
conf
DOI
10.1109/ICIPRM.2003.1205371
Filename
1205371
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