DocumentCode :
3531495
Title :
Over 2,000 hours of RT-CW operation of GaInAsP/InP vertically-stacked multiple-quantum-wire laser
Author :
Yagi, Hideki ; Sano, Tomomi ; Ohira, Kazuya ; Maruyama, Tetsuhiro ; Haque, Ashraful
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
fYear :
2003
fDate :
12-16 May 2003
Firstpage :
378
Lastpage :
379
Abstract :
A RT-CW operation of GaInAsP/InP quantum-wire lasers (23 nm wide, 5 stacked quantum-wires) fabricated by EB lithography, CH4/H2-RIE and OMVPE regrowth was realized for the first time. No noticeable degradation was observed even after 2,000 hours´ at RT-CW condition.
Keywords :
III-V semiconductors; MOCVD coatings; electron beam lithography; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor growth; semiconductor quantum wires; sputter etching; surface emitting lasers; vapour phase epitaxial growth; 2000 h; 23 nm; CH4/H2-RIE; GaInAsP-InP; GaInAsP/InP vertically-stacked multiple-quantum-wire laser; OMVPE regrowth; RT-CW operation; electron beam lithography; Distributed feedback devices; Etching; Indium phosphide; Laser feedback; Lifetime estimation; Lithography; Optical device fabrication; Scanning electron microscopy; Threshold current; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
Type :
conf
DOI :
10.1109/ICIPRM.2003.1205394
Filename :
1205394
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3531495
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