Study on the surface reaction kinetics of InGaAs related materials MOCVD through analyses of growth rate distribution in the selective area growth

Wide stripe selective area growth was proposed as a tool for getting information on surface kinetics in the metalorganic chemical vapor deposition (MOCVD). GaAs and InP were grown over patterned substrates using SiO₂ mask. The characterized growth-rate enhancement profiles were successfully fitted with 2-dimensional simulation taking only gas phase diffusion into account except for the profiles in the vicinity of mask edge, which seemed to reflect surface diffusion. Considering that gas phase diffusion coefficient can be estimated by observing a reactor-scale growth-rate profile, the only parameter determining growth-rate enhancement profile was sticking probability of a film precursor on the surface of GaAs. The estimated sticking probability was 0.05 - 0.4 for GaAs and 0.26 - 0.5 for InP. The information on the surface reaction was gathered in various conditions, such as temperature, group V partial pressure. The study on polycrystalline growth over mask was also carried out using the information of SAG analysis. It is shown that polycrystals was generated when the concentration of a film precursor just above the mask exceeded a critical value. This information is important not only for the design of selective area growth process but also for constructing more realistic reaction model of MOCVD.