Title :
100+ GHz transistor electronics; present and projected capabililties
Author_Institution :
ECE Dept., Univ. of California, Santa Barbara, CA, USA
Abstract :
Design principle and the present status of high-frequency transistors and integrated circuits are reviewed. Given presently-demonstrated process and material parameters, bipolar transistors having ~3 THz power-gain cutoff frequencies are feasible. Demonstration of field-effect transistors having similar bandwidth requires development of high-capacitance-density gate dielectrics of adequately low leakage current, and high-K oxide gate barriers may therefore be necessary. Transistors of such bandwidths would enable e.g. ~1.5 THz radio transmitters and receivers; classical electron device and circuit techniques are feasible over most of the sub-millimeter-wave (0.3-3 THz) spectrum.
Keywords :
bipolar transistors; field effect transistors; leakage currents; radio receivers; radio transmitters; submillimetre wave transistors; bipolar transistors; classical electron device; field-effect transistors; frequency 0.3 THz to 3 THz; high-K oxide gate barriers; high-capacitance-density gate dielectrics; high-frequency transistors; integrated circuits; leakage current; power-gain cutoff frequencies; radio transmitters; receivers; transistor electronics; Bandwidth; Conductivity; Cutoff frequency; FETs; Logic gates;
Conference_Titel :
Microwave Photonics (MWP), 2010 IEEE Topical Meeting on
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-7824-8
DOI :
10.1109/MWP.2010.5664255
