On the development of automatic assembly line for InP HEMT MMICs

Author

Chou, Y.C. ; Barsky, M. ; Grundbacher, R. ; Lai, R. ; Leung, D. ; Bonnin, R. ; Akbany, S. ; Tsui, S. ; Kan, Q. ; Eng, D. ; Oki, A.

Author_Institution

Northrop Grumman Space Technol., Redondo Beach, CA, USA

fYear

2003

fDate

12-16 May 2003

Firstpage

476

Lastpage

479

Abstract

We have developed the process of automatic assembly line (AAL) on InP HEMT MMICs to enhance the assembly throughput owing to the large volume assembly of InP HEMT MMIC parts for phased-array applications. The DC and RF characteristics before and after AAL were evaluated to assure that InP HEMTs are robust enough to undertake the AAL process. Furthermore, the bond-pull test was incorporated into AAL process to evaluate the bond-pull strength, which is critical for large volume assembly. The bond-pull strength experiment led to improvement of the bonding process from a 3.5-sigma to a 5.2-sigma. As a result, it reduces the attrition rate significantly of InP HEMT MMICs subjected to the AAL process. The results substantiate that InP HEMT MMICs are robust enough to be subjected to large volume of AAL assembly.

Keywords

HEMT integrated circuits; III-V semiconductors; antenna phased arrays; assembly planning; field effect MMIC; indium compounds; integrated circuit bonding; integrated circuit manufacture; microwave antenna arrays; 3.5-sigma; 5.2-sigma; DC characteristics; InP; InP HEMT MMIC; RF characteristics; assembly throughput; attrition rate; automatic assembly line; bond-pull strength; bond-pull test; bonding process; large volume assembly; phased-array applications; Assembly; Bonding processes; HEMTs; Indium phosphide; MMICs; Radio frequency; Robustness; Space technology; Testing; Throughput;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205420

Filename

1205420