Reliable and damage-free dry grating etching for the InGaAsP DFB laser diodes

Author

Kim, Hyeon Soo ; Lee, Eun-Hwa ; Rhee, Do Young ; Bang, Young Churl ; Yu, Joon Sang ; Lee, Jung Kee ; Choo, Ahn Goo ; Kim, Tae Il

Author_Institution

Photonics Solution Lab., Samsung Electron. Co. Ltd., Suwon, South Korea

fYear

2003

fDate

12-16 May 2003

Firstpage

480

Lastpage

483

Abstract

We developed dry etching for the fabrication of DFB lasers. Most of all, effects of dry etching conditions such as rf power and etch mask materials on the etching properties and overgrown active layers were investigated. Device characteristics and long-term stability of DFB laser fabricated by using a dry etched grating were also measured.

Keywords

III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; laser stability; optical fabrication; quantum well lasers; sputter etching; InGaAsP; InGaAsP DFB laser diodes; MQW layers; device characteristics; etch mask materials; etching properties; fabrication; long-term stability; overgrown active layers; reliable damage-free dry grating etching; rf power; Diode lasers; Dry etching; Epitaxial layers; Gratings; Laser stability; Optical device fabrication; Optical materials; Resists; Surface emitting lasers; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205421

Filename

1205421

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3531879