High-speed electroabsorption modulators using ruthenium-doped SI-InP: impact of interdiffusion-free burying technology on E/O modulation characteristics

Author

Tamura, Munehisa ; Yamanaka, Takayuki ; Fukano, Hideki ; Akage, Yuichi ; Kondo, Yasuhiro ; Saitoh, Tadashi

Author_Institution

NTT Photonics Labs., NTT Corp., Kanagawa, Japan

fYear

2003

fDate

12-16 May 2003

Firstpage

491

Lastpage

494

Abstract

InGaAlAs/InAlAs electroabsorption (EA) modulators are successfully fabricated using ruthenium (Ru)-doped semi-insulating (SI)-InP burying technology. A comparison between measured and calculated microwave characteristics reveals that no additional microwave loss due to Zn diffusion occurred because of the use of Ru-doped SI-InP layers. A small-signal E/O response with a -3 dB electrical bandwidth of over 50 GHz is demonstrated.

Keywords

III-V semiconductors; aluminium compounds; buried layers; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical losses; ruthenium; 50 GHz; E/O modulation characteristics; InGaAlAs-InAlAs; InGaAlAs/InAlAs electroabsorption modulators; InP:Ru; Ru-doped semi-insulating InP burying technology; Zn diffusion; electrical bandwidth; high-speed electroabsorption modulators; interdiffusion-free burying technology; microwave characteristics; microwave loss; ruthenium-doped SI-InP; small-signal E/O response; Bandwidth; Etching; High speed optical techniques; Loss measurement; Microwave devices; Microwave measurements; Optical modulation; Parasitic capacitance; Polyimides; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205423

Filename

1205423