DocumentCode
3532167
Title
Alternative substrates for InP and related materials
Author
Kuech, T.F. ; Liu, Ning ; Kim, Tong-Ho ; Yi, Changhyun ; Brown, April S.
Author_Institution
Wisconsin Univ., Madison, WI, USA
fYear
2003
fDate
12-16 May 2003
Firstpage
562
Abstract
We will present examples of wafer bonding as applied to InGaAs/InP system highlighting the effects of the bonding process on the post-bonding device characteristics. Some future directions of alternative substrates for use in InP technologies will be presented.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; substrates; wafer bonding; InGaAs-InP; InGaAs/InP system; InP technologies; post-bonding device characteristics; substrates; wafer bonding; Conducting materials; Costs; Indium phosphide; Large scale integration; Mechanical factors; Semiconductor materials; Substrates; Thermal conductivity; Thermal management; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN
0-7803-7704-4
Type
conf
DOI
10.1109/ICIPRM.2003.1205442
Filename
1205442
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