DocumentCode
3532944
Title
Experimental evaluation of a 600 V super-junction planar PT IGBT prototype — Comparison with planar PT and trench gate PT technologies
Author
Selgi, Lorenzo M. ; Fragapane, Leonardo
Author_Institution
STMicroelectron., Catania, Italy
fYear
2013
fDate
2-6 Sept. 2013
Firstpage
1
Lastpage
7
Abstract
We report, for the first time, an experimental electrical characterization of a super-junction PT IGBT feasibility study on applying the charge compensation device concept to a planar punch-through IGBT. We also performed a comparison both with a planar PT IGBT and a trench gate PT IGBT.
Keywords
insulated gate bipolar transistors; charge compensation device concept; planar punch-through IGBT; super-junction planar PT IGBT prototype; trench gate PT technology; voltage 600 V; Conductivity; Doping; Electric breakdown; Electric fields; Insulated gate bipolar transistors; Junctions; Logic gates; Bipolar device; Charge compensation device; Device characterization; IGBT; Super junction devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location
Lille
Type
conf
DOI
10.1109/EPE.2013.6631745
Filename
6631745
Link To Document