Title :
New generation of organic-based thin-film transistors
Author_Institution :
Lab. des Mater. Moleculaires, CNRS, Thiais, France
Abstract :
Summary form only given. Among the newly developed organic semiconductors, thiophene oligomers e.g., sexithiophene molecules are very stable under ambient conditions and they can be easily deposited as thin homogeneous films by the use of mild techniques such as vacuum evaporation at about 300° C. From X-ray diffraction, polarized light absorption spectroscopy and scanning electron microscopy studies, it has been shown that structural organization of molecules in the film is the determining factor which controls its electrical properties. By varying the experimental conditions for film deposition (substrate temperature) and by the development of self assembly properties in these oligomers (molecular engineering of semiconductors), highly structured film with long range order can be easily obtained as evidenced by the large anisotropy observed in conductivity, σ/sub 11//σ/sub ⊥/=150. The fabrication and mode of operation of thin film transistors based on these p-type organic semiconductors is described, in which substrate, insulator, and electrodes can be made from organic materials corresponding to an all organic device.
Keywords :
X-ray diffraction; organic semiconductors; scanning electron microscopy; semiconductor thin films; thin film transistors; vacuum deposited coatings; visible spectroscopy; 300 degC; X-ray diffraction; anisotropy; electrical properties; organic semiconductors; organic-based thin-film transistors; polarized light absorption spectroscopy; scanning electron microscopy studies; self assembly properties; sexithiophene molecules; structural organization; substrate temperature; thin homogeneous films; thiophene oligomers; vacuum evaporation; Anisotropic conductive films; Electromagnetic wave absorption; Optical polarization; Organic semiconductors; Semiconductor films; Spectroscopy; Substrates; Thin film transistors; Vacuum technology; X-ray diffraction;
Conference_Titel :
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-2788-8
DOI :
10.1109/DRC.1995.496227