DocumentCode
3535006
Title
Dual-gate FETs for ultra-high efficiency HPA
Author
Tanimoto, Teruo ; Tanaka, S. ; Ohbu, I. ; Matsumoto, H. ; Nakamura, T.
Author_Institution
Central Res. Labs., Hitachi Ltd., Tokyo, Japan
fYear
1995
fDate
19-21 June 1995
Firstpage
34
Lastpage
35
Abstract
Dual-gate FETs with higher output impedance have been developed for ultra-high efficiency mobile communication high power amplifiers (HPAs). These FETs have a large linear gain (22 dB) and maximum power-added efficiency (PAE) of 78%, almost twice that of single-gate FETs. They operate with a 3-V supply voltage at 1.9 GHz.
Keywords
UHF field effect transistors; UHF power amplifiers; mobile radio; power field effect transistors; 1.9 GHz; 22 dB; 3 V; 78 percent; UHF transistors; dual-gate FETs; high power amplifiers; linear gain; maximum power-added efficiency; mobile communication; output impedance; ultra-high efficiency HPA; ultra-high efficiency amplifiers; Breakdown voltage; Circuits; Flyback transformers; Gain; High power amplifiers; Impedance; Laboratories; Microwave FETs; Mobile communication; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location
Charlottesville, VA, USA
Print_ISBN
0-7803-2788-8
Type
conf
DOI
10.1109/DRC.1995.496238
Filename
496238
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