DocumentCode
3535210
Title
A 15 GHz bandwidth lattice-matched InAlAs/InGaAs/InP HEMT-based OEIC photoreceiver
Author
Fay, P. ; Wohlmuth, W. ; Caneau, Catherine ; Adesida, I.
Author_Institution
Center for Compound Semicond. Microelectron., Illinois Univ., Urbana, IL, USA
fYear
1995
fDate
19-21 June 1995
Firstpage
70
Lastpage
71
Abstract
We report an advance in photoreceiver performance achieved by utilizing very high-performance quarter-micron lattice-matched high-electron mobility transistors (HEMTs) and metal-semiconductor-metal (MSM) photodetectors in the design of a 1.55 /spl mu/m sensitive high-speed, monolithically integrated lightwave receiver.
Keywords
HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; photodetectors; 1.55 micron; 15 GHz; InAlAs-InGaAs-InP; MSM photodetector; OEIC photoreceiver; high-speed lightwave receiver; lattice-matched HEMT; monolithic integration; Bandwidth; Frequency; HEMTs; Indium gallium arsenide; Indium phosphide; Optical feedback; Optical receivers; Optoelectronic devices; Output feedback; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location
Charlottesville, VA, USA
Print_ISBN
0-7803-2788-8
Type
conf
DOI
10.1109/DRC.1995.496275
Filename
496275
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