Analysis of the SiC VJFET gate punch-through and its dependence with the temperature

Turning off a SiC VJFET from INFINEON requires to apply a gate-to-source voltage comprised between the JFET gate threshold voltage and the punch-through voltage. Unfortunately, for applications operating over a large temperature range, these two limits vary with the temperature and reduce the useful blocking gate-to-source voltage range as the temperature rises. So, the punch-through temperature dependence is a very important feature for applications operating in a wide temperature range like aeronautic applications. This paper addresses the analysis and modeling of the punch-through phenomenon and its dependence to the temperature. The proposed model gives a good agreement with the experimental data.