Off-current characteristics of conductivity modulated TFT

Author

Anish Kumar, K.P. ; Sin, Johnny K O

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong

fYear

1995

fDate

6-10 Nov 1995

Firstpage

52

Lastpage

55

Abstract

This paper reports the leakage current characteristics of Conductivity Modulated Thin Film Transistor (CMTFT) fabricated using polycrystalline silicon. The transistor uses the idea of conductivity modulation in the offset region to obtain a significant reduction in on-state resistance. Experimental on-state and off-state current-voltage characteristics of the CMTFT have been compared with those of the conventional offset drain device. The devices were fabricated using a low temperature process (620°C) which is highly desirable for large area electronic applications

Keywords

MOSFET; elemental semiconductors; leakage currents; silicon; thin film transistors; 620 C; I-V characteristics; Si; conductivity modulated TFT; current-voltage characteristics; large area electronic applications; leakage current characteristics; low temperature fabrication process; offcurrent characteristics; offset region; on-state resistance reduction; polycrystalline Si; polysilicon; thin film transistor; Charge carrier processes; Conductivity; Implants; Leakage current; Optical films; Silicon; Substrates; Temperature; Thin film transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Print_ISBN

0-7803-2624-5

Type

conf

DOI

10.1109/TENCON.1995.496333

Filename

496333