DocumentCode
3535971
Title
ZnSe blue LED with nitrogen-doped ZnSe grown in a Se-rich condition by low-pressure OMCVD
Author
Yeh, Min-Yen ; Lee, Ming-Kwei
Author_Institution
Dept. of Electron. Eng., Yung-Ta Junior Coll. of Technol. & Commerce, Ping-Tung, Taiwan
fYear
1995
fDate
6-10 Nov 1995
Firstpage
73
Lastpage
76
Abstract
Pure-blue emission of the as-grown ZnSe diode at 300 K was observed. The EL spectrum was dominated by a band-to-band emission peak at 2.68 eV with a half-width 52 meV. The results were consistent with that of the photoluminescence spectrum. These indicated that high-quality ZnSe blue LEDs were obtained under the developed growth condition
Keywords
CVD coatings; II-VI semiconductors; electroluminescence; light emitting diodes; nitrogen; photoluminescence; semiconductor growth; zinc compounds; 2.68 eV; 300 K; ZnSe:N; band-to-band emission; blue LED; electroluminescence spectrum; growth; low-pressure OMCVD; nitrogen-doped ZnSe; photoluminescence spectrum; Chemical vapor deposition; Conductivity; Hydrogen; Light emitting diodes; Molecular beam epitaxial growth; Nitrogen; Optical device fabrication; Temperature; Weight control; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN
0-7803-2624-5
Type
conf
DOI
10.1109/TENCON.1995.496339
Filename
496339
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