DocumentCode :
3536156
Title :
Research on preparation and properties of PI-EP composite material
Author :
Chen, Yufei ; Yue, Wei ; Bian, Zongzhen ; Fan, Yong ; Chen, Yating
Author_Institution :
Coll. of Mater. Sci. & Eng., Harbin Univ. of Sci. & Technol., Harbin, China
fYear :
2012
fDate :
24-28 July 2012
Firstpage :
1
Lastpage :
4
Abstract :
A series of PI-EP composite materials under different imidization temperature gradients were prepared from 3,3´-diethyl-4,4´-diamino diphenyl methane (DEDA DPM), benzop-henone tetracarboxylic acid dianhydride (BTDA) and epoxy resin (E-51), and thermal imide process was used. Fourier transform infrared spectroscopy (FI-TR) indicated that the chemical reactions between poly(amic acid) and epoxy resin was existence and imide ring had formed. Heat-resistant property, dielectric property and mechanical property of PI-EP composite materials were tested, respectively. The results showed that the order of the materials heat resistance was 493 K>;523 K>;473 K>; 453 K, dielectric constant and dielectric loss were ranged from 3.30~3.68 and 1.2×10-3~1.3×10-2, the shear strength of PI-EP-493 K was the best and attained maximum value 8.962 MPa, the adhesive forces of all composite materials were at the higher level (one or two level), fully met the applied requirement.
Keywords :
Fourier transform spectra; chemical reactions; dielectric losses; filled polymers; infrared spectra; materials preparation; permittivity; resins; shear strength; 3,3´-diethyl-4,4´-diamino diphenyl methane; BTDA; DEDA DPM; FI-TR; Fourier transform infrared spectroscopy; PI-EP composite material preparation; benzop-henone tetracarboxylic acid dianhydride; chemical reactions; dielectric constant; dielectric property; heat-resistant property; imidization temperature gradients; material heat resistance; shear strength; thermal imide process; Heating; Materials; epoxy resin; polyimide; synthesis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Properties and Applications of Dielectric Materials (ICPADM), 2012 IEEE 10th International Conference on the
Conference_Location :
Bangalore
ISSN :
2160-9225
Print_ISBN :
978-1-4673-2852-4
Type :
conf
DOI :
10.1109/ICPADM.2012.6319003
Filename :
6319003
Link To Document :
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