Title :
1/f noise in spin transistors
Author :
Hwang, Y.T. ; Lin, M.C. ; Huang, Y.W. ; Lo, C.K. ; Yao, Y.D. ; Huang, H.L.
Author_Institution :
Opto-Electron. & Syst. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
The model of 1/f noise for a spin transistor have been studied. The sources of the 1/f noise have been differentiated into two. One source is from the PN junction with the major contributor of recombination, and the other from the giant magnetoresistance multilayer. Actual data was measured on a spin transistor while doing a simulation of the 1/f noise. The measured data matches the output of the simulations.
Keywords :
1/f noise; giant magnetoresistance; magnetic multilayers; p-n junctions; thin film transistors; 1/f noise; PN junction; giant magnetoresistance; multilayer; spin transistors; Circuit noise; Computational modeling; Equivalent circuits; Fabrication; Frequency measurement; Knee; Noise measurement; Nonhomogeneous media; Thin film circuits; Thin film devices;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1464036
