Fabrication of gated wedge-shaped field emitter array by plasma etching and gold plating

Author

Zhang, Jinshu ; Lo, Tai-Chin

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong

fYear

1995

fDate

6-10 Nov 1995

Firstpage

191

Lastpage

194

Abstract

A gated wedge-shaped field emitter has been fabricated by anisotropic etching and gold plating. The structure displays high emitter aspect ratio, sharp emitter tip and small gate-to-tip distance which are crucial in lowering the threshold voltage and increasing the emission efficiency of the device. The process is fairly simple with high processing latitude, and is, therefore, suitable for applications such as flat panel displays and ultra-high frequency devices

Keywords

electroplating; gold; semiconductor technology; sputter etching; vacuum microelectronics; Au plating; Au-Si:P; Si:P; anisotropic etching; emission efficiency; flat panel displays; gate-to-tip distance; gated wedge-shaped field emitter array; high emitter aspect ratio; high processing latitude; plasma etching; sharp emitter tip; threshold voltage; ultra-high frequency devices; Anisotropic magnetoresistance; Etching; Fabrication; Field emitter arrays; Flat panel displays; Gold; Plasma applications; Plasma devices; Plasma displays; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Print_ISBN

0-7803-2624-5

Type

conf

DOI

10.1109/TENCON.1995.496370

Filename

496370