• DocumentCode
    3536498
  • Title

    Charge trapping properties of N2O-treated NH3-nitrided oxides under high-field stress

  • Author

    Xu, Zeng ; Lai, P.T. ; Ng, W.T.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
  • fYear
    1995
  • fDate
    6-10 Nov 1995
  • Firstpage
    256
  • Lastpage
    259
  • Abstract
    A new technique, namely N2O treatment of NH3-nitrided oxides (NON20), is proposed to fabricate thin oxide. It is shown that the N2O treatment is superior to conventional reoxidation step in improving charge trapping property and interface hardness of oxides under high-field stress
  • Keywords
    MOS capacitors; MOS integrated circuits; VLSI; characteristics measurement; electron traps; integrated circuit measurement; interface states; nitridation; MOS capacitors; MOS circuits; N2O; NH3; VLSI; charge trapping properties; high-field stress; interface hardness; Annealing; Capacitance-voltage characteristics; Current measurement; Dielectric substrates; Electron traps; Interface states; MOS capacitors; Nitrogen; Stress; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
  • Print_ISBN
    0-7803-2624-5
  • Type

    conf

  • DOI
    10.1109/TENCON.1995.496387
  • Filename
    496387
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3536498