DocumentCode :
3536535
Title :
A new gate current measurement technique for the characterization of hot-carrier-induced degradation in MOSFETs
Author :
Leang, S.E.
Author_Institution :
Centre for Integrated Circuit Failure Anal. & Reliability, Nat. Univ. of Singapore, Singapore
fYear :
1995
fDate :
6-10 Nov 1995
Firstpage :
266
Lastpage :
269
Abstract :
The floating-gate technique has been used extensively for studying hot-carrier effects in MOSFETs. However, this technique can cause the device to degrade if the measurement time is too long. A new method is proposed, which allows the Ig-Vg curves of the MOSFETs to be determined in a shorter time, thereby reducing the risk of degrading the test device during the measurement process
Keywords :
MOSFET; characteristics measurement; electric current measurement; hot carriers; semiconductor device reliability; Ig-Vg curves; MOSFETs; gate current measurement technique; hot-carrier-induced degradation; measurement time; Capacitance measurement; Current measurement; Degradation; Hot carrier effects; Hot carriers; Integrated circuit measurements; MOSFETs; Parasitic capacitance; Testing; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
Type :
conf
DOI :
10.1109/TENCON.1995.496390
Filename :
496390
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3536535
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