• DocumentCode
    3536729
  • Title

    Performance improvement of 3-D position-sensitive pixellated HgI2 detectors when cooled from room temperature to 10 °C

  • Author

    Zhu, Yuefeng ; Kaye, Willy ; He, Zhong ; Zhang, Feng

  • Author_Institution
    Dept. of Nucl. Eng. & Radiol. Sci., Univ. of Michigan, Ann Arbor, MI, USA
  • fYear
    2010
  • fDate
    Oct. 30 2010-Nov. 6 2010
  • Firstpage
    3959
  • Lastpage
    3962
  • Abstract
    An experiment to measure the performance of 3-D position-sensitive pixellated HgI2 crystals cooled below room temperature was carried out using a new ASIC from GammaMedica-Ideas. This ASIC is capable of reading out the digitized pre-amplifier signal waveforms of 121 pixels and the cathode. A significant improvement in energy resolution from 1.48% FWHM at 662keV for the whole detector to 1.09% FWHM is observed on a 18×18×11mm3 crystal at -4800V cathode bias when the ambient temperature is lowered from 70°F to 50°F (about 10°C). This resolution improvement is partly due to electronic noise reduction in the readout system. However, analysis of the pre-amplifier waveforms showed that changes in crystal properties played a more important role. A correlation between total electron trapping and energy resolution was identified. However, the amount of trapping was found irrelevant to crystal performance. Instead, the non-uniformity of charge collection, namely non-uniformity of the material defects, was believed to be the main contributor to crystal performance.
  • Keywords
    application specific integrated circuits; cathodes; mercury compounds; nuclear electronics; position sensitive particle detectors; readout electronics; semiconductor counters; 3D position sensitive pixellated HgI2 detectors; ASIC; HgI2; cathode; detector performance improvement; digitized preamplifier signal waveforms; electron volt energy 662 keV; energy resolution; readout system electronic noise reduction; size 11 mm; size 18 mm; temperature 283.15 K to 298 K; total electron trapping; voltage -4800 V; Anodes; Charge carrier processes; Detectors; Energy resolution; Pixel; Semiconductor device measurement; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE
  • Conference_Location
    Knoxville, TN
  • ISSN
    1095-7863
  • Print_ISBN
    978-1-4244-9106-3
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2010.5874558
  • Filename
    5874558