• DocumentCode
    3537474
  • Title

    The characteristics of magnetic tunnel junctions using the Co2MnSi Heusler alloy depending on a compositional variation

  • Author

    Keewon Kim ; Kim, T.W. ; Kwon, Soon-Ju

  • Author_Institution
    Dept. of Mater. Sci. & Eng., POSTECH, Pohang, South Korea
  • fYear
    2005
  • fDate
    4-8 April 2005
  • Firstpage
    1451
  • Lastpage
    1452
  • Abstract
    The magnetic tunnel junctions (MTJ) using the Heusler alloy of Co2MnSi with compositional variation was fabricated through sputtering. The Heusler alloy films were investigated by XRD, VSM, and EDS techniques. The tunneling magnetoresistance (TMR) of MTJ were also investigated.
  • Keywords
    X-ray chemical analysis; X-ray diffraction; cobalt alloys; ferromagnetic materials; magnetic thin films; manganese alloys; silicon alloys; sputter deposition; tunnelling magnetoresistance; Co2MnSi; EDS; Heusler alloy films; TMR; VSM; XRD; compositional variation; magnetic tunnel junctions; sputtering; tunneling magnetoresistance; Cobalt alloys; Magnetic films; Magnetic materials; Magnetic properties; Magnetic tunneling; Magnetoelectronics; Rough surfaces; Sputtering; Surface roughness; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
  • Print_ISBN
    0-7803-9009-1
  • Type

    conf

  • DOI
    10.1109/INTMAG.2005.1464155
  • Filename
    1464155
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3537474