DocumentCode
3537680
Title
Effects of ion beam irradiation on electrical properties of Langmuir-Blodgett (LB) films
Author
Kyokane, Jun ; Yoshimizu, Michiro ; Taniguchi, Isao ; Aoki, Yasuo ; Yoshino, Katsumi
Author_Institution
Nara Nat. Coll. of Technol., Japan
fYear
1995
fDate
17-20 Sep 1995
Firstpage
89
Lastpage
92
Abstract
An RF (3-heptafluoropropyle) thiophene oligomer and a TCNQ complex with different molar ratios of the donor and acceptor were prepared as conductive materials by the Langmuir-Blodgett (LB) technique. A method utilizing ion beam irradiation for improving the quality and stability of the LB films was also proposed
Keywords
Langmuir-Blodgett films; conducting materials; electrical conductivity; ion beam effects; organic compounds; 3-heptafluoropropyle; Langmuir-Blodgett films; RF thiophene oligomer; TCNQ complex; conductive materials; donor acceptor complex; electrical properties; ion beam irradiation; Conducting materials; Conductive films; Conductivity; Electrodes; Ion beams; Ion sources; Optical devices; Optical films; Radio frequency; Thin film sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Insulating Materials, 1995. International Symposium on
Conference_Location
Tokyo
Print_ISBN
4-88686-047-8
Type
conf
DOI
10.1109/ISEIM.1995.496515
Filename
496515
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