• DocumentCode
    3537701
  • Title

    Electrical conduction and breakdown in amorphous tantalum and niobium oxide films

  • Author

    Khanin

  • Author_Institution
    Herzen State Pedagogical Univ., St. Petersburg, Russia
  • fYear
    1995
  • fDate
    17-20 Sep 1995
  • Firstpage
    97
  • Lastpage
    100
  • Abstract
    The paper presents the results of investigating the electronic conduction and destruction of amorphous tantalum and niobium oxides (a-Ta2O5, a-Nb2O5) in thin anodic layers on metal surfaces in strong electric fields. It is shown that the breakdown of a highly homogeneous oxide dielectric is preceded by storage processes (dielectric aging)
  • Keywords
    ageing; amorphous state; anodised layers; dielectric thin films; electric breakdown; electrical conductivity; insulating thin films; niobium compounds; tantalum compounds; Nb2O5; Ta2O5; amorphous Nb2O5 films; amorphous Ta2O5 films; breakdown; dielectric aging; electronic conduction; highly homogeneous oxide dielectric; metal surfaces; storage processes; strong electric fields; thin anodic layers; Amorphous materials; Charge carriers; Conductive films; Conductivity; Electric breakdown; Frequency; Niobium; Resonance; Temperature dependence; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulating Materials, 1995. International Symposium on
  • Conference_Location
    Tokyo
  • Print_ISBN
    4-88686-047-8
  • Type

    conf

  • DOI
    10.1109/ISEIM.1995.496517
  • Filename
    496517
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3537701