DocumentCode :
3538013
Title :
Effect of instantaneous voltage change rate on appearance of swarming pulsive microdischarges
Author :
Ishida, Takahiro ; Nagao, Masayuki ; Kosaki, Masamitsu
Author_Institution :
Shizuoka Inst. of Sci. & Technol., Japan
fYear :
1995
fDate :
17-20 Sep 1995
Firstpage :
205
Lastpage :
208
Abstract :
The study investigates the time variation of SPMD characteristics and the effect of the instantaneous voltage change rate on SPMD in a CIGRE Method-II specimen by using the computer aided partial discharge analyzing system (CAPDAS). The following conclusions were obtained. (1) SPMD did not occur at first, but increased with the aging time and finally almost all PDs turned into SPMD. The appearance of SPMD was concerned with the degradation of insulator. The void surface roughness was one of the main factors for the appearance of SPMD. From these results it would be possible to find the degradation of insulating materials by the SPMD ratio. (2) SPMD is less likely to occur under the application of the very low frequency voltage. The charge integral at 0.1 Hz measured with the conventional pulse method was almost equal to the bridge value at 60 Hz. Therefore the quantitative analysis of SPMD characteristics becomes possible using only the conventional PD detector under the voltage application of both very low and power frequency
Keywords :
ageing; insulation testing; life testing; partial discharges; surface topography; CIGRE Method-II specimen; SPMD characteristics; aging time; charge integral; computer aided partial discharge analyzing system; instantaneous voltage change rate; insulating materials degradation; swarming pulsive microdischarges; very low frequency voltage; void surface roughness; Aging; Degradation; Frequency; Insulation; Partial discharges; Pulse measurements; Rough surfaces; Surface discharges; Surface roughness; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulating Materials, 1995. International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
4-88686-047-8
Type :
conf
DOI :
10.1109/ISEIM.1995.496544
Filename :
496544
Link To Document :
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