Analysis of two asymmetric multiquantum well InGaAsP laser structures

Summary form only given. Two aspects of asymmetric MQW lasers are studied. First, the output of a well as a function of its position in the active region has been modeled and measured experimentally. The simulations predicted that wells near the p-side of the active region contribute more light than wells near the n-side. Second, the competition between wells of different thicknesses owing to the dependence of capture of carriers and gain on well thickness and well placement in the active region has been observed experimentally.