Low-Voltage Transient/Biodegradable Transistors Based on Free-Standing Sodium Alginate Membranes

Author

Jie Guo ; Jingquan Liu ; Bin Yang ; Guanghui Zhan ; Xiaoyang Kang ; Hongchang Tian ; Longjun Tang ; Xiang Chen ; Chunsheng Yang

Author_Institution

Dept. of Micro/Nano-Electron., Shanghai Jiao Tong Univ., Shanghai, China

Volume

36

Issue

6

fYear

2015

fDate

Jun-15

Firstpage

576

Lastpage

578

Abstract

In this letter, we report a novel transient/ biodegradable transistor. The Al:ZnO (AZO) source, drain, and gate electrodes are directly self-assembled on the free-standing sodium alginate (SA) membrane by magnetron sputtering, and the SA membrane is used simultaneously as the substrates and dielectrics for the transistor. Due to the strong lateral electrostatic coupling effects of SA membrane, the transistor can operate at a low voltage of 1 V. Dissolution tests of the transistor in deionized water suggest its completely physical transience within 1 h.

Keywords

aluminium; biodegradable materials; biomembranes; low-power electronics; power transistors; sputter etching; zinc compounds; Al:ZnO; biodegradable transistors; deionized water; dissolution test; free-standing SA membrane; gate electrodes; lateral electrostatic coupling effect; low-voltage transient transistors; magnetron sputtering; sodium alginate membrane; voltage 1 V; Biomembranes; Electrodes; Logic gates; Low voltage; Substrates; Transient analysis; Transistors; Low voltage transistors; free-standing sodium alginate membranes; transient/biodegradable transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2424982

Filename

7090946