DocumentCode

3539780

Title

MOVPE Growth of lnGaAsP using TBA and TBP with Extremely Low V/Ill Ratio

Author

Horita, M. ; Suzuki, M. ; Matsushima, Y.

Author_Institution

KDD R&D Laboratories, Japan

fYear

1992

fDate

8-11 Jun 1992

Firstpage

191

Lastpage

192

Keywords

Controllability; Crystallization; Electron mobility; Epitaxial growth; Epitaxial layers; Gold; Indium phosphide; Photoluminescence; Safety; Solids;

fLanguage

English

Publisher

ieee

Conference_Titel

Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference

Print_ISBN

0-87942-652-7

Type

conf

DOI

10.1109/MOVPE.1992.703849

Filename

703849