Title :
A low-threshold and polarization-controlled vertical-cavity, surface-emitting laser grown on GaAs (311)B substrate by MOCVD
Author :
Mizutani, A. ; Hatori, Nobuaki ; Nishiyama, N. ; Koyama, F. ; Iga, K.
Author_Institution :
Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
Summary form only given. We realized a low-threshold current (600 /spl mu/A) and polarization-controlled InGaAs QW DBR vertical-cavity surface-emitting laser (VCSEL) on a GaAs (311)B substrate by metalorganic chemical-vapor deposition (MOCVD).
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; light polarisation; quantum well lasers; semiconductor growth; surface emitting lasers; vapour phase epitaxial growth; 600 muA; GaAs; GaAs (311)B substrate; InGaAs; InGaAs QW DBR VCSEL laser; MOCVD epitaxial growth; low-threshold; metalorganic chemical-vapor deposition; polarization-controlled; vertical-cavity surface-emitting laser; Dynamic range; Frequency; Gallium arsenide; Noise measurement; Optical noise; Optical receivers; Polarization; Substrates; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676119
