DocumentCode
3540976
Title
Local accumulated free carriers in charge trapping memory
Author
Song, Y.C. ; Liu, X.Y. ; Zhao, K. ; Kang, J.F. ; Han, R.Q. ; Xia, Z.L. ; Kim, D. ; Lee, K.-H.
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
fYear
2008
fDate
15-16 June 2008
Firstpage
1
Lastpage
2
Abstract
The effects of local accumulated free carriers on CTM cell´s performance are investigated by numerical simulation. Simulation results indicates that local accumulated free carriers do not affect programming and erasing characteristic, however, they are important to CTM´s retention characteristic, especially in low threshold state. For CTM cell with thick tunneling oxide and shallow trap depth in charge storage layer, absence of accumulated carriers will underestimate retention capability considerably.
Keywords
numerical analysis; random-access storage; tunnelling; CTM cell performance; charge storage layer; charge trapping memory; local accumulated free carriers; low threshold state; numerical simulation; shallow trap depth; thick tunneling oxide; Charge carrier density; Costs; Electron traps; Flash memory cells; Microelectronics; Nonvolatile memory; Poisson equations; Radiative recombination; Temperature; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location
Honolulu, HI
Print_ISBN
978-1-4244-2071-1
Type
conf
DOI
10.1109/SNW.2008.5418392
Filename
5418392
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