Title :
Atomistic modeling on carbon co-implant with silicon pre-amorphization implant technique
Author :
Park, Soon-Yeol ; Cho, Bum-Goo ; Won, Taeyoung
Author_Institution :
Dept. of Electr. Eng., Inha Univ., Incheon, South Korea
Abstract :
In this paper, boron transient enhanced diffusion in silicon pre-amorphization implant (PAI) and carbon co-implant PAI is investigated via kinetic Monte Carlo approach. The damages induced by Si-PAI and carbon co-implant are calculated. Boron implantation and subsequent annealing are thereafter performed. The simulation implies that carbon co-implant PAI reduces the amount of interstitial near the surface when compared with Si-PAI and that carbon co-implant with silicon PAI reduced TED effectively.
Keywords :
Monte Carlo methods; annealing; boron; carbon; diffusion; elemental semiconductors; interstitials; ion implantation; silicon; Si:B,C; annealing; atomistic modeling; boron implantation; boron transient enhanced diffusion; carbon co-implant; interstitial; kinetic Monte Carlo approach; silicon preamorphization implant technique; Boron; FETs; Implants; Information technology; Ion implantation; Kinetic theory; MOSFET circuits; Mass spectroscopy; Rapid thermal annealing; Silicon;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418405
