Investigation of resistive probes with high sensitivity

Author

Kim, Sang Wan ; Song, Jae Young ; Kim, Jong PH ; Woo Young Choi ; Chung, Han Ki ; Park, Jae ; Hyungsoo Ko ; Park, Hongsik ; Park, Chulmin ; Hong, Seungbum ; Choa, Sung-Hoon ; Lee, Jong Duk ; Shin, Hyungcheol ; Park, Byung-Gook

Author_Institution

Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea

fYear

2008

fDate

15-16 June 2008

Firstpage

1

Lastpage

2

Abstract

Novel fabrication methods are investigated to enhance the sensitivity of resistive probes. In this paper, two new silicon resistive probes are presented by using two-dimensional device simulation (SILVACO^Â¿). Enhancement probe and I-MOS probe are formed by using anisotropic etch and mask transcription process. Due to novel structures, the sensitivity of resistive probes is increased dramatically.

Keywords

etching; masks; probes; semiconductor process modelling; sensitivity; I-MOS probe; SILVACO; anisotropic etch process; enhancement probe; fabrication methods; mask transcription process; resistive probes; sensitivity; two-dimensional device simulation; Anisotropic magnetoresistance; Computer science; Etching; Fabrication; Ferroelectric materials; Ion implantation; Laboratories; MOSFETs; Probes; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-2071-1

Type

conf

DOI

10.1109/SNW.2008.5418407

Filename

5418407