Title :
Electrical characteristics of the back-gated bottom-up silicon nanowire field effect transistor
Author :
Kim, DukSoo ; Jung, YoungChai ; Park, MiYoung ; Kim, ByungSung ; Hong, SuHeon ; Choi, Minsu ; Kang, MyungGil ; Yu, YunSeop ; Whang, Dongmok ; Sungwoo Hwang
Author_Institution :
Res. Center for Time-domain Nano-functional Devices, Korea Univ., Seoul, South Korea
Abstract :
We report electrical characteristics of back-gated silicon nanowire field effect transistors (SNWFETs) fabricated using silicon nanowires synthesized by a standard vapor-liquid-solid process. It is shown that the mobilities obtained from the measured transconductances are reasonable only when the nanowire is fully depleted.
Keywords :
field effect transistors; nanotechnology; nanowires; back-gated bottom-up silicon nanowire field effect transistor; electrical characteristics; standard vapor-liquid-solid process; transconductance data; Doping; Electric variables; FETs; Gold; Intrusion detection; Nanoscale devices; Silicon; Time domain analysis; Transconductance; Voltage;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418412
