40 GHz broadband optical receiver combining a multimode waveguide photodiode flip-chip mounted on a GaAs-based HEMT distributed amplifier

Author

Leven, A. ; Hurm, V. ; Bronner, W. ; Kohler, K. ; Walcher, H. ; Kiefer, R. ; Fleissner, J. ; Rosenzweig, J. ; Schlechtweg, M.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

Volume

2

fYear

2000

fDate

11-16 June 2000

Firstpage

683

Abstract

A 40 GHz bandwidth, 1.55 /spl mu/m wavelength photoreceiver for high-speed digital and microwave-via-fiber applications is presented. The photoreceiver consists of a GaInAs/AlGaInAs/AlInAs multimode waveguide photodiode flip-chip bonded on GaAs-based pseudomorphic HEMT distributed amplifier. The overall conversion gain is as high as 167 V/W.

Keywords

HEMT circuits; III-V semiconductors; distributed amplifiers; flip-chip devices; gallium arsenide; microwave photonics; optical receivers; optical waveguide components; photodiodes; 1.55 micron; 40 GHz; GaAs; GaAs pseudomorphic HEMT distributed amplifier; GaInAs-AlGaInAs-AlInAs; GaInAs/AlGaInAs/AlInAs multimode waveguide photodiode; bandwidth; conversion gain; flip-chip mounting; high-speed digital communication; microwave-via-fiber communication; optical receiver; Bandwidth; Bonding; Distributed amplifiers; Gold; HEMTs; Indium phosphide; Optical amplifiers; Optical receivers; Optical waveguides; Photodiodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.863275

Filename

863275