DocumentCode
354133
Title
X-band GaAs MMIC size reduction and integration
Author
Griffin, E.L.
Author_Institution
M/A-COM Inc., Roanoke, VA, USA
Volume
2
fYear
2000
fDate
11-16 June 2000
Firstpage
709
Abstract
This paper describes efforts at ITT to develop cost effective GaAs X-Band MMICs. The ITT MSAG(R) GaAs MMIC process is first described. A brief discussion on the merits of chip integration is followed by a discussion of the ITT338510D commercial 12-Watt MMIC, and the ITT373504D commercial control chip (phase shifter, attenuator, driver, digital control) with emphasis on our efforts to reduce chip area.
Keywords
III-V semiconductors; field effect MMIC; gallium arsenide; integrated circuit economics; integrated circuit yield; 12 W; GaAs; ITT MSAG process; ITT338510D; ITT373504D; MMIC; X-band; attenuator; chip area; chip integration; digital control; driver; multifunction self-aligned gate; phase shifter; size reduction; Assembly; Attenuators; Costs; FETs; Gallium arsenide; Ion implantation; MMICs; Manufacturing processes; Phase shifters; Robustness;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-7803-5687-X
Type
conf
DOI
10.1109/MWSYM.2000.863281
Filename
863281
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