DocumentCode
354136
Title
SiGe MMIC´s beyond 20 GHz on a commercial technology
Author
Rheinfelder, C.N. ; Kuhnert, H. ; Luy, J.-F. ; Heinrich, W. ; Schuppen, A.
Author_Institution
DaimlerChrysler Res. Center Ulm, Germany
Volume
2
fYear
2000
fDate
11-16 June 2000
Firstpage
727
Abstract
A comparison of 22 and 25 GHz MMIC SiGe-HBT oscillators on high- and low-resistivity silicon employing the commercial TEMIC process is presented. An output power of 11 dBm at 22 GHz, an efficiency of 24%, and, at 25 GHz, a phase-noise of -93 dBc/Hz at 100 kHz off-carrier is measured.
Keywords
Ge-Si alloys; MMIC oscillators; bipolar MMIC; heterojunction bipolar transistors; integrated circuit technology; semiconductor materials; 22 GHz; 24 percent; 25 GHz; HBT oscillator; SiGe; SiGe MMIC technology; TEMIC process; Costs; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; MMICs; Phase noise; Resistors; Silicon germanium; Space technology; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-7803-5687-X
Type
conf
DOI
10.1109/MWSYM.2000.863285
Filename
863285
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