Effect of Gauss doping profile on electric potential of p-n diode

This study aimed to determine the effects of Gauss doping profile on electric potential of p-n diode. This effect is studied by simulating PN diodes at equilibrium condition with differences in doping fall-off constant (dfc) using MATLAB and COMSOL software. According to the simulation results, it concluded that p-n diode with different Gaussian doping profile, will produce similar built-in voltage (V_Gbi). But, each p-n diode with different Gaussian doping profile, has different maximum junction voltage (V_jmax) and minimum junction voltage (V_jmin). These junction voltages have strong correlation with dfc. We propose an equation of built-in voltage for Gauss Doping Profile, and also equations of V_jmax and V_jmin.