Title :
Full adder operation based on Si nanodot array device
Author :
Kaizawa, Takuya ; Arita, Masashi ; Fujiwara, Akira ; Yamazaki, Kenji ; Ono, Yukinori ; Inokawa, Hiroshi ; Takahashi, Yasuo
Author_Institution :
Dept. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo, Japan
Abstract :
We demonstrate a highly functional Si-nanodot-array device that has three input gates and two output terminals. The device was fabricated on an SOI wafer using Si MOS processes. We confirmed that a single device can operate as both a half adder and a full adder when we carefully select the operation voltages.
Keywords :
adders; nanoelectronics; silicon-on-insulator; MOS processes; SOI wafer; full adder operation; half adder; nanodot array device; three input gates; two output terminals; Current measurement; Electrons; Germanium silicon alloys; Heart; Isotopes; Modems; Nanoscale devices; Physics; Quantum dots; Silicon germanium;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418457
