DocumentCode :
3541481
Title :
Characterization of a single resonant charge in a silicon nanowire device
Author :
Pierre, M. ; Jehl, X. ; Sanquer, M. ; Vinet, M. ; Molas, G. ; Deleonibus, S.
Author_Institution :
DRFMC, CEA-Grenoble, Grenoble, France
fYear :
2008
fDate :
15-16 June 2008
Firstpage :
1
Lastpage :
2
Abstract :
We investigate the time-dependent transport properties of two very asymmetric coupled quantum dots: a single resonant charge and an electrometer made of a gated silicon nanowire in the Coulomb blockade regime. The occupation probability of the charge trap is obtained by noise measurements. We observe the predicted smearing of the Coulomb peaks at the resonance, the back-action of the electrometer on the single charge as well as a relatively large dip in the charging energy of the whole system.
Keywords :
Coulomb blockade; elemental semiconductors; nanoelectronics; nanowires; semiconductor quantum dots; silicon; Coulomb blockade regime; Si; asymmetric coupled quantum dots; electrometer; noise measurements; silicon nanowire device; single resonant charge; time-dependent transport properties; Electrons; Germanium silicon alloys; Heart; Isotopes; Modems; Nanoscale devices; Physics; Quantum dots; Resonance; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
Type :
conf
DOI :
10.1109/SNW.2008.5418458
Filename :
5418458
Link To Document :
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