Title :
Electron transport through silicon multiple quantum dot array devices
Author :
Yamahata, Gento ; Tsuchiya, Yoshishige ; Mizuta, Hiroshi ; Oda, Shunri
Author_Institution :
Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
We fabricated the Si MQDADs. and measured their electron transport properties. The currents through the MQDADs were analyzed and the strong interaction. between the two DQDs was observed. The MQDADs are promising candidates for the novel information devices.
Keywords :
elemental semiconductors; semiconductor quantum dots; silicon; electron transport; silicon multiple quantum dot array devices; Current measurement; Electrons; Germanium silicon alloys; Heart; Isotopes; Modems; Physics; Quantum dots; Silicon germanium;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418459
