Title :
Atomistic study of phonon states in hydrogen-terminated Si ultra-thin films
Author :
Sawai, S. ; Uno, S. ; Okamoto, M. ; Tsuchiya, Y. ; Oda, S. ; Mizuta, H.
Author_Institution :
Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
Ab initio simulation of ´nanophonons´ has been conducted for the first time for the H-terminated ultrathin Si films of 3 to 10 atomic layers in thickness and have revealed that the phonon bandgaps are formed as a result of the Si dimers on the surface.
Keywords :
ab initio calculations; elemental semiconductors; hydrogen; phonons; semiconductor thin films; silicon; Si dimers; Si:H; ab initio simulation; atomic layers; atomistic study; hydrogen-terminated Si ultrathin films; nanophonons; phonon bandgaps; phonon states; Electrons; Germanium silicon alloys; Heart; Isotopes; Modems; Phonons; Physics; Quantum dots; Semiconductor films; Silicon germanium;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418466
